Method and system for providing a barrier for a magnetoresistive structure utilizing heating

ABSTRACT

A method and system for providing a magnetic recording transducer is described. The method and system include providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided.

BACKGROUND

FIG. 1 depicts a conventional method 10 for forming a tunnelingmagnetoresistive element in a read transducer. The read transducerincludes a magnetic tunneling junction formed using the method 10. Thelayers in the magnetoresistive sensor, or stack, below the conventionaltunneling barrier layer are deposited, via step 12. The magnetoresistivestack is typically formed on other structures, such as, shield(s),and/or write transducer(s). The magnetoresistive stack layers aretypically blanket deposited. The layers below the tunneling barrierlayer typically include seed layer(s), a conventional antiferromagnetic(AFM) layer, and a conventional pinned layer. A metallic Mg layer mayoptionally be deposited, via step 14. The Mg layer may be desired forthe conventional MgO barrier layer. A conventional MgO barrier layer isdeposited, via step 16. The conventional MgO barrier layer is acrystalline insulator. After deposition of the conventional MgO barrierlayer, the transducer may be heated at a high temperature in situ, viastep 18. Thus, the conventional transducer may be heated in thedeposition chamber in which the MgO barrier layer is formed. In general,a high temperature on the order of three or four hundred degrees Celsiusor higher is used. A free layer is provided, via step 20. Fabrication ofthe conventional tunneling magnetoresistive element, as well as theremainder of the transducer may then be completed, via step 22. Step 22may include defining the conventional tunneling magnetoresistiveelement, which is to be a read sensor, in the track width and stripeheight directions. Other structures, such as hard bias structures,contacts, shields, and write transducers may also be formed. The trackwidth direction is parallel to the air-bearing surface (ABS) andgenerally perpendicular to the layers of the magnetoresistive stack.

Although the method 10 may be used to fabricate a tunnelingmagnetoresistive element, there may be drawbacks. For use in highdensity magnetic recording devices, for example on the order of fivehundred gigabits per square inch it is desirable for the tunnelingmagnetoresistive element to have certain characteristics. A lowresistance times area (RA), for example less than one Ω-μm², as well asa high tunneling magnetoresistance (TMR) are desired for fast recordingand a high signal to noise ratio (SNR). However, the conventionalcrystalline tunneling barrier fabricated using the conventional method10 may produce insufficient RA and TMR for high density recordingapplications. Use of the Mg layer provided in step 14 may improve thecrystallinity of the conventional MgO barrier layer and thus the RA andTMR. However, the improvement in RA and TMR may be insufficient.Further, heating performed in step 18 may not significantly improve theconventional MgO barrier layer and may cause diffusion of portions ofthe pinning layer and SAF, which adversely impacts performance of theconventional magnetic element. Consequently, an improved tunnelingbarrier layer and thus an improved magnetoresistive element for use inhigh density recording are still desired.

BRIEF SUMMARY OF THE INVENTION

A method and system for providing a magnetic recording transducer isdescribed. The method and system include providing a pinned layer for amagnetic element. In one aspect, a portion of a tunneling barrier layerfor the magnetic element is provided. The magnetic recording transducerannealed is after the portion of the tunneling barrier layer isprovided. The annealing is at a temperature higher than roomtemperature. A remaining portion of the tunneling barrier layer isprovided after the annealing. In another aspect, the magnetic transduceris transferred to a high vacuum annealing apparatus before annealing themagnetic transducer. In this aspect, the magnetic transducer may beannealed before any portion of the tunneling barrier is provided orafter at least a portion of the tunneling barrier is provided. Theannealing is performed in the high vacuum annealing apparatus. A freelayer for the magnetic element is also provided.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a flow chart depicting a conventional method for fabricating aread transducer.

FIG. 2 is a flow chart depicting an exemplary embodiment of a method forfabricating a read transducer.

FIG. 3 is a flow chart depicting another exemplary embodiment of amethod for fabricating a read transducer.

FIG. 4 depicts an exemplary embodiment of a magnetoresistive structure.

FIG. 5 depicts an exemplary embodiment of a transducer including amagnetoresistive structure.

FIG. 6 is a flow chart of another exemplary embodiment of a method forfabricating a magnetic transducer.

FIG. 7 depicts another exemplary embodiment of a magnetic element.

FIG. 8 depicts an exemplary embodiment of a magnetic recording headincorporating a magnetic recording transducer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 2 is a flow chart of an exemplary embodiment of a method 100 forfabricating a magnetoresistive element, particularly a tunnelingmagnetoresistive element for use as a read sensor in a read transducer.For simplicity, some steps may be omitted or combined with other steps.The method 100 also may commence after formation of other structures ofthe read transducer, such as shields. The method 100 is also describedin the context of providing a single magnetoresistive structure.However, the method 100 may be used to fabricate multiple structures atsubstantially the same time. The method 100 is also described in thecontext of particular layers. However, in some embodiments, such layersmay include sub-layer(s).

A pinned layer of the magnetic element is provided, via step 102. In oneembodiment, the pinned layer is provided on a pinning layer or otherlayer configured to fix, or pin, the magnetization of the pinned layerin a particular direction. The direction may include but not limited toperpendicular to the ABS. In another embodiment, the pinned layer mightbe provided after the MgO barrier layer described below. In such anembodiment, the pinning layer might be provided on the pinned layer. Inone embodiment, the pinned layer is desired to be a syntheticantiferromagnet (SAF). In such an embodiment, step 102 includesdepositing at least two ferromagnetic layers separated by a nonmagneticspacer layer. In some embodiments, the ferromagnetic layers areantiferromagnetically coupled.

A portion of a tunneling barrier layer is provided for the magneticelement, via step 104. The tunneling barrier layer provided is desiredto be crystalline. Consequently, step 104 may include depositing MgOsuch that a portion of the barrier layer is formed. In one embodiment,at least twenty percent of the total thickness of the tunneling barrierlayer is deposited in step 104. For example, in one embodiment, twoAngstroms of a ten Angstrom-thick barrier layer is deposited in step104. In another embodiment, not less than forty percent of the totalthickness of the tunneling barrier is provided in step 104. Thus, fourAngstroms of a then Angstrom-thick barrier layer may be provided in step104. In another embodiment, not less than eighty percent of thetunneling barrier layer is provided in step 104. Other thicknesses andother percentages are possible for the portion of the tunneling barrierlayer deposited in step 104. However, less than all of the tunnelingbarrier is provided in step 104. In addition, a thin Mg layer may alsobe provided in step 104. For example, a Mg layer having a thickness ofless than four Angstroms may be formed.

The magnetic recording transducer is annealed after the portion of thetunneling barrier layer is provided, via step 106. The temperature ofthe anneal in step 106 is greater than room temperature. However, thetemperature is relatively low. In some embodiments, the temperature usedis not more than four hundred degrees Celsius. In some embodiments, theanneal is at a temperature that is not more than three hundred degreesCelsius. In some embodiments, the anneal temperature is not more thantwo hundred degrees Celsius. In some such embodiments, the temperatureis at least one hundred degrees Celsius. In some embodiments, the annealmay take place in a separate, high vacuum annealing chamber. The highvacuum annealing chamber may provide a higher vacuum than available inthe remaining portion of the system, for example in situ, where layersof the transducer are deposited. In some embodiments, the high vacuumannealing chamber may be capable of achieving pressures not in excess of9×10⁻⁸ Torr. In some such embodiments, the pressure achieved is not morethan 5×10⁻⁸ Torr. In embodiments, the high vacuum annealing chamber maybe able to achieve pressures of not more than 2×10⁻⁸ Torr. In someembodiments, the high vacuum achieved in the high vacuum annealingchamber may be 8×10⁻⁹ Torr or less. Thus, the magnetic recordingtransducer may be annealed in a very high vacuum. The anneal in step 106may be for a relatively short time, for example at least five and notmore than twenty minutes.

A remaining portion of the tunneling barrier layer is provided, via step108. The tunneling barrier layer is desired to be a crystallineinsulator. Thus, deposition of MgO may continue in step 108. Step 108occurs after step 106 has been completed. The remaining portion of thetunneling barrier layer is provided after the annealing of the magneticrecording transducer in step 106. The total thickness of the tunnelingbarrier layer may range from six through twenty Angstroms.

A free layer for the magnetic element is provided, via step 110. Step110 may include providing one or more layers that form the free layer.The free layer may also be a SAF, may include magnetic or otherinsertion layers and/or have another structure. In addition, capping orother layers may also be provided in the magnetic element. In otherembodiments, additional barrier, spacer, pinned and/or other layersmight be provided.

Using the method 100, a magnetic element having improved characteristicsmay be achieved. In particular a high TMR and a low RA may befabricated. In some embodiments, an RA that is less than 1 Ω-μm² may beattained. In some embodiments, improved thermal stability, a highexchange bias, and a high roll off field may also be achieved. It isbelieved that the improved RA and TMR may be obtained because ofimprovements in the crystallinity and/or stoichiometry of the tunnelingbarrier layer. The relatively low temperature anneal may result inremoval of OH ions that would otherwise be part of the MgO tunnelingbarrier layer. In particular, the atomic ratio of Mg:O may be closer to1:1 than for a conventional MgO barrier layer. In some embodiments, theatomic ratio of Mg:O may be less than 1.2:1 and at least 1:1. Further,the crystallinity of the tunneling barrier layer may also be improved,resulting in improved RA and/or TMR. Thus, performance of a readtransducer fabricated using the method 100 may be improved.

FIG. 3 is a flow chart depicting another exemplary embodiment of amethod 120 for fabricating a read transducer. For simplicity, some stepsmay be omitted or combined with other steps. The method 120 also maycommence after formation of other structures of the read transducer,such as shields. The method 120 is also described in the context ofproviding a single magnetoresistive structure. However, the method 120may be used to fabricate multiple structures at substantially the sametime. The method 120 is also described in the context of particularlayers. However, in some embodiments, such layers may includesub-layer(s).

A pinning layer for the magnetic element is provided, via step 122. Insome embodiments, step 122 includes depositing an AFM layer. Forexample, IrMn and/or another AFM might be used. The orientation of theAFM may be set at a later time, for example by heating the magneticrecording transducer in a field oriented in the desired direction. Inone embodiment, the orientation may be perpendicular to the ABS.However, another direction may be selected in another embodiment.

A pinned layer of the magnetic element is provided adjacent to thepinning layer, via step 124. Step 124 is analogous to step 102 of themethod 100, discussed above. In one embodiment, the pinned layer isprovided on the pinning layer. In another embodiment, the pinned layermight be provided after the MgO barrier layer described below. In suchan embodiment, the pinning layer might be provided on the pinned layer.In one embodiment, the pinned layer is desired to be a SAF. In such anembodiment, step 124 includes depositing at least twoantiferromagnetically coupled ferromagnetic layers separated by anonmagnetic spacer layer.

A portion of a tunneling barrier layer is provided for the magneticelement, via step 126. The tunneling barrier layer provided is desiredto be crystalline and thus may include MgO. In one embodiment, at leasttwenty percent of the total thickness of the tunneling barrier layer isdeposited in step 126. In another embodiment, not less than fortypercent of the total thickness of the tunneling barrier is provided. Inanother embodiment, not less than eighty percent of the tunnelingbarrier layer is provided in step 126. Other thicknesses and otherpercentages are possible. However, less than one hundred percent of thetunneling barrier is provided in step 126. In addition, a thin Mg layer,on the order of less than four Angstroms in thickness, may alsooptionally be provided as part of the tunneling barrier layer in step126.

The magnetic transducer is transferred to a high vacuum annealingapparatus, via step 128. In such embodiments, the transducer may betransferred to the high vacuum annealing chamber while precludingexposure of the transducer to ambient. Stated differently, thetransducer may be transferred without breaking vacuum. In addition, thehigh vacuum annealing chamber may provide a higher vacuum than availablein the remaining portion of the system, for example in situ, wherelayers of the transducer are deposited. For example, in someembodiments, the high vacuum annealing chamber may be capable ofachieving pressures not in excess of 9×10⁻⁸ Torr. In some suchembodiments, the pressures achieved are not more than 5×10⁻⁸ Torr. Inembodiments, the high vacuum annealing chamber may be able to achievepressures of not more than 2×10⁻⁸ Torr. In some embodiments, the highvacuum achieved in the high vacuum annealing chamber may be 8×10⁻⁹ Torror less.

The magnetic recording transducer is annealed after the portion of thetunneling barrier layer is provided and the transducer transferred tothe high vacuum annealing chamber, via step 130. The anneal temperaturein step 130 is greater than room temperature. However, the temperatureis relatively low, less than four hundred degrees Celsius. In someembodiments, the temperature used is not more than three hundred degreesCelsius. In some embodiments, the anneal temperature is not more thantwo hundred degrees Celsius. In some such embodiments, the temperatureis at least one hundred degrees Celsius. The time taken for the annealmay also be very short. For example, in some embodiments, the anneal isfor five to twenty minutes or less. Thus, the magnetic recordingtransducer may be annealed in a very high vacuum.

A remaining portion of the tunneling barrier layer is provided, via step132. Thus, deposition of MgO may continue in step 132. Step 132 occursafter step 130 has been completed. The remaining portion of thetunneling barrier layer is provided after the annealing of the magneticrecording transducer in step 130. The total thickness of the tunnelingbarrier layer may range from six through twenty Angstroms. Step 132 mayinclude transferring the transducer from the high vacuum annealingchamber to a deposition chamber prior to deposition of the remainingportion of the tunneling barrier. This transfer may also be performedwithout exposing the transducer to ambient.

A free layer for the magnetic element is provided, via step 134. One ormore layers that form the free layer are thus deposited in step 134. Thefree layer may also be a SAF, may include magnetic or other insertionlayers and/or have another structure. In addition, capping or otherlayers may also be provided in the magnetic element. In otherembodiments, additional barrier, spacer, pinned and/or other layersmight be provided.

The method 130 may have benefits analogous to those of the method 100.Thus, a magnetic element having improved characteristics may be achievedusing the method 130. In particular a high TMR and a low RA may befabricated. In some embodiments, an RA that is less than 1 Ω-μm² may beattained. In some embodiments, improved thermal stability, a highexchange bias, and a high roll off field may also be achieved. It isbelieved that the improved RA and TMR may be obtained because ofimprovements in the crystallinity and/or stoichiometry of the tunnelingbarrier layer. The relatively low temperature anneal, particularly at ahigh vacuum achieved in the high vacuum anneal chamber, may result inremoval of OH ions that would otherwise be part of the MgO layer. Inparticular, the atomic ratio of Mg:O may be closer to 1:1 than for aconventional MgO barrier layer. In some embodiments, the atomic ratio ofMg:O may be less than 1.2:1 and at least 1:1. Further, the crystallinityof the tunneling barrier layer may also be improved. As a result, RAand/or TMR may be improved. Thus, performance of a read transducerfabricated using the method 100 may be improved.

FIG. 4 depicts an exemplary embodiment of a magnetoresistive element 200that may be fabricated using the method 100 and/or 120. The magneticelement 200 may be used in a read transducer. For clarity, FIG. 4 is notdrawn to scale. In addition, portions of the magnetic element may beomitted.

The magnetic element 200 includes a pinned layer 202, a tunnelingbarrier 204, and a free layer 206. The tunneling barrier 204 residesbetween the free layer 206 and the pinned layer 204. The pinned layer202 may be formed in step 102 or 124 and may be adjacent to a pinninglayer (not shown in FIG. 4). The free layer may be formed using step 110or 134 of the method 100 or 120, respectively. The tunneling barrier 204may be formed using steps 104-108 or steps 126-132 of the method 100 or120, respectively. In the embodiment shown, the tunneling barrier 204includes two portions, 204A and 204B. The first portion 204A may beformed before the anneal, for example in steps 104 or 126. While thesecond portion 204B is formed after the anneal, for example in step 108or 132. The stoichiometry of the tunneling barrier 204 may be closer towhat is desired. For example, for a crystalline MgO barrier layer 204,the stoichiometry includes an atomic ratio of Mg to O of less than 1.2:1and at least 1:1. Further, the crystal structure of the crystalline MgObarrier layer 204 may be closer to what is desired.

The magnetic element 200 may have improved characteristics, such as ahigh TMR and a low RA. In some embodiments, an RA that is less than 1Ω-μm² may be attained. In some embodiments, improved thermal stability,a high exchange bias, and a high roll off field may also be achieved forthe magnetic element 200. It is believed that the improved RA and TMRmay be obtained because of improvements in the crystallinity and/orstoichiometry of the tunneling barrier layer. Thus, performance of aread transducer including the magnetic element 200 may be improved.

FIG. 5 depicts an exemplary embodiment of a read transducer 210including a magnetoresistive structure. For clarity, FIG. 5 is not drawnto scale. In addition, portions of the magnetic transducer may beomitted. The magnetic transducer 210 includes a shield 212, a magneticelement 200′, insulators 216, and hard bias structures 220. In theembodiment shown, the read sensor 200′ is used in a currentperpendicular-to-plane (CPP) mode. Thus, the insulators 216 areincluded. However, in another embodiment, the read sensor 200′ may beused in a current-in-plane (CIP) mode. In such an embodiment, theinsulators 216 may be omitted.

The magnetic element 200′ is analogous to the magnetic element 200 andthus includes a pinned layer 202′, a tunneling barrier 204′ havingportions 204A′ and 204B′, and a free layer 206′. Because the magneticelement 200′ is fabricated using the method 100 or 120, the magneticelement 200′ may have improved characteristics, such as a high TMR and alow RA. As a result, the read transducer 210 may have improvedperformance, particularly at high densities on the order of five hundredgigabits per square inch or greater.

FIG. 6 is a flow chart of another exemplary embodiment of a method 150for fabricating a magnetic transducer. For simplicity, some steps may beomitted or combined with other steps. The method 150 also may commenceafter formation of other structures of the read transducer, such asshields. The method 150 is also described in the context of providing asingle magnetoresistive structure. However, the method 150 may be usedto fabricate multiple structures at substantially the same time. Themethod 150 is also described in the context of particular layers.However, in some embodiments, such layers may include sub-layer(s).

A pinned layer of the magnetic element is provided, via step 152. Step152 is analogous to steps 102 and 124 of the methods 100 and 120,discussed above. A portion of a tunneling barrier layer may optionallybe provided for the magnetic element, via step 154. However, in anotherembodiment, step 154 may be omitted.

The magnetic transducer is transferred to a high vacuum annealingapparatus, via step 156. Step 156 may thus be analogous to step 128. Thetransducer may be transferred to the high vacuum annealing chamber whileprecluding exposure of the transducer to ambient. Stated differently,the transducer may be transferred without breaking vacuum. In addition,the high vacuum annealing chamber may provide a higher vacuum thanavailable in the remaining portion of the system, for example in situ,where layers of the transducer are deposited. For example, in someembodiments, the high vacuum annealing chamber may be capable ofachieving pressures not in excess of 9×10⁻⁸ Torr. In some suchembodiments, the pressures achieved are not more than 5×10⁻⁸ Torr. Inembodiments, the high vacuum annealing chamber may be able to achievepressures of not more than 2×10⁻⁸ Torr. In some embodiments, the highvacuum achieved in the high vacuum annealing chamber may be 8×10⁻⁹ Torror less.

The magnetic recording transducer is annealed after the transducertransferred to the high vacuum annealing chamber, via step 158. Theanneal temperature in step 158 is greater than room temperature.However, the temperature is relatively low, less than four hundreddegrees Celsius. In some embodiments, the temperature used is not morethan three hundred degrees Celsius. In some embodiments, the annealtemperature is not more than two hundred degrees Celsius. In some suchembodiments, the temperature is at least one hundred degrees Celsius.The time taken for the anneal may also be very short. For example, insome embodiments, the anneal is for five to twenty minutes or less.Thus, the magnetic recording transducer may be annealed in a very highvacuum.

A remaining portion of the tunneling barrier layer is provided, via step160. In some embodiments, in which step 154 is omitted, the entiretunneling barrier is provided in step 160. In some embodiments, thetunneling barrier is crystalline MgO. Thus, MgO may be deposited in step154. Thus, a thin Mg layer of not more than four Angstroms may beprovided as part of the tunneling barrier layer in step 154 or step 160.The remaining portion of the tunneling barrier layer is provided afterthe annealing of the magnetic recording transducer in step 158. Thetotal thickness of the tunneling barrier layer may range from sixthrough twenty Angstroms. Step 156 includes transferring the transducerfrom the high vacuum annealing chamber to a deposition chamber prior todeposition of the remaining portion of the tunneling barrier. Thistransfer may also be performed without exposing the transducer toambient.

A free layer for the magnetic element is provided, via step 162. One ormore layers that form the free layer are thus deposited in step 162. Thefree layer may also be a SAF, may include magnetic or other insertionlayers and/or have another structure. In addition, capping or otherlayers may also be provided in the magnetic element. In otherembodiments, additional barrier, spacer, pinned and/or other layersmight be provided.

The method 150 may have benefits analogous to those of the methods 100and 120. Thus, a magnetic element having improved characteristics may beachieved using the method 150. Although the anneal may take place priorto any portion of the tunneling barrier layer being formed, the annealmay still improve the stoichiometry and/or crystallinity of the magneticelement. It is believed that the heating of the transducer in step 158may provide carry-over heating, which functions similarly to annealingof an already deposited portion of the tunneling barrier layer. Thus,the benefits of the methods 100 and 120 may also be achieved using themethod 150. Thus, performance of a read transducer fabricated using themethod 150 may be improved.

FIG. 7 depicts another exemplary embodiment of a magnetoresistiveelement 300 that may be fabricated using the method 150. The magneticelement 300 may be used in a read transducer. For clarity, FIG. 7 is notdrawn to scale. In addition, portions of the magnetic element may beomitted.

The magnetic element 300 includes a pinned layer 302, a tunnelingbarrier 304, and a free layer 306. The tunneling barrier 304 residesbetween the free layer 306 and the pinned layer 304. The pinned layer302 may be formed in step 152 and may be adjacent to a pinning layer(not shown in FIG. 7). The free layer may be formed using step 162. Thetunneling barrier 304 may be formed using steps 154-160 of the method150. In the embodiment shown, the tunneling barrier 304 includes twoportions, 304A and 304B. The first portion 304A is optional and may beformed before the anneal. The second portion 304B is formed after theanneal, for example in step 160. The stoichiometry of the tunnelingbarrier 304 may be closer to what is desired. For example, for acrystalline MgO barrier layer 304, the stoichiometry includes an atomicratio of Mg to O of less than 1.2:1 and at least 1:1. Further, thecrystal structure of the crystalline MgO barrier layer 204 may be closerto what is desired.

The magnetic element 300 may have improved characteristics, such as ahigh TMR and a low RA. In some embodiments, an RA that is less than 1Ω-μm² may be attained. In some embodiments, improved thermal stability,a high exchange bias, and a high roll off field may also be achieved forthe magnetic element 300. It is believed that the improved RA and TMRmay be obtained because of improvements in the crystallinity and/orstoichiometry of the tunneling barrier layer. Thus, performance of aread transducer including the magnetic element 200 may be improved.

FIG. 8 depicts an exemplary embodiment of a read transducer 310including a magnetoresistive structure. For clarity, FIG. 8 is not drawnto scale. In addition, portions of the magnetic transducer may beomitted. The magnetic transducer 310 includes a shield 312, a magneticelement 300′, insulators 316, and hard bias structures 320. In theembodiment shown, the read sensor 300′ is used in a CPP mode. Thus, theinsulators 316 are included. However, in another embodiment, the readsensor 300′ may be used in a CIP mode. In such an embodiment, theinsulators 316 may be omitted.

The magnetic element 300′ is analogous to the magnetic element 300 andthus includes a pinned layer 302′, a tunneling barrier 304′ havingportions 304A′ and 304B′, and a free layer 306′. Because the magneticelement 300′ is fabricated using the method 150, the magnetic element300′ may have improved characteristics, such as a high TMR and a low RA.As a result, the read transducer 310 may have improved performance,particularly at high densities on the order of five hundred gigabits persquare inch or greater. Thus, performance of the transducer 310 may beimproved.

1. A method for providing magnetic recording transducer comprising:providing a pinned layer of a magnetic element; providing a portion of atunneling barrier layer for the magnetic element; annealing the magneticrecording transducer after the portion of the tunneling barrier layer isprovided at a temperature higher than room temperature; providing aremaining portion of the tunneling barrier layer, the remaining portionbeing provided after the annealing of the magnetic recording transducer;and providing a free layer for the magnetic element.
 2. The method ofclaim 1 wherein the temperature is not more than four hundred degreescentigrade.
 3. The method of claim 2 wherein the temperature is not morethan two hundred degrees centigrade.
 4. The method of claim 1 whereinthe temperature is at least one hundred degrees centigrade.
 5. Themethod of claim 1 further comprising: transferring magnetic transducerto a high vacuum annealing apparatus before annealing the magnetictransducer and after the portion of the nonmagnetic spacer layer isformed.
 6. The method of claim 5 wherein the step of transferring themagnetic transducer is performed while precluding exposure of themagnetic transducer to an ambient environment.
 7. The method of claim 5,wherein the high vacuum is not more than 9×10⁻⁸ Torr.
 8. The method ofclaim 5, wherein the high vacuum is not more than 5×10⁻⁸ Torr.
 9. Themethod of claim 5, wherein the high vacuum is not more than 2×10⁻⁸ Torr.10. The method of claim 5, wherein the high vacuum is not more than8×10⁻⁹ Torr.
 11. The method of claim 1 wherein the pinned layer is asynthetic antiferromagnet (SAF) including a first ferromagnetic layerhaving a first magnetization, a second ferromagnetic layer having asecond magnetization, and a nonmagnetic layer between the firstferromagnetic layer and the second ferromagnetic layer.
 12. The methodof claim 1 wherein the tunneling barrier layer has a total thickness andthe portion of the tunneling barrier layer is not less than twentypercent of the total thickness.
 13. The method of claim 1 wherein thetunneling barrier layer has a total thickness and the portion of thetunneling barrier layer is not less than forty percent of the totalthickness.
 14. The method of claim 1 wherein the tunneling barrier layerhas a total thickness and the portion of the tunneling barrier layer isnot less than eighty percent of the total thickness.
 15. A method forproviding magnetic recording transducer having an air-bearing surface(ABS) comprising: providing a pinned layer of a magnetic element;providing a portion of a tunneling barrier layer of the magneticelement, the tunneling barrier layer a total thickness upon completion,the portion of the tunneling barrier layer being at least twenty percentand less than one hundred percent of the total thickness; transferringmagnetic transducer to a high vacuum annealing apparatus; annealing themagnetic recording transducer in the high vacuum annealing apparatusafter the portion of the tunneling barrier layer is provided at atemperature of at least one hundred degrees centigrade and not more thantwo hundred degrees centigrade, the high vacuum annealing apparatushaving a pressure of not more than 5×10⁻⁸ Torr during the anneal;providing a remaining portion of the tunneling barrier layer after theannealing of the magnetic recording transducer; and providing a freelayer of the magnetic element.
 16. A method for providing magneticrecording transducer having an air-bearing surface (ABS) comprising:providing a pinned layer of a magnetic element; transferring magnetictransducer to a high vacuum annealing apparatus before annealing themagnetic transducer; annealing the magnetic recording transducer in thehigh vacuum annealing apparatus at a temperature higher than roomtemperature; providing a tunneling barrier layer of the magneticelement; and providing a free layer of the magnetic element.
 17. Themethod of claim 16 wherein the temperature is not more than four hundreddegrees centigrade.
 18. The method of claim 17 wherein the temperatureis not more than two hundred degrees centigrade.
 19. The method of claim16 wherein the temperature is at least one hundred degrees centigrade.20. The method of claim 16, wherein the high vacuum is not more than9×10⁻⁸ Torr.
 21. The method of claim 20, wherein the high vacuum is notmore than 5×10⁻⁸ Torr.
 22. The method of claim 16, wherein the highvacuum is not more than 2×10⁻⁸ Torr.
 23. The method of claim 16, whereinthe high vacuum is not more than 8×10⁻⁹ Torr.
 24. The method of claim 16wherein the step of transferring the magnetic transducer is performedwhile precluding exposure of the magnetic transducer to an ambientenvironment.
 25. The method of claim 16 wherein the tunneling barrierlayer has a total thickness and wherein a portion of the tunnelingbarrier layer is provided before the annealing.
 26. The method of 16wherein the step of providing the tunneling barrier layer is after thestep of annealing the magnetic transducer.
 27. The method of 16 whereinthe step of providing the tunneling barrier layer is before the step ofannealing the magnetic transducer.
 28. A magnetic recording transducerhaving an air-bearing surface (ABS) comprising: a magnetic elementincluding a pinned layer, a tunneling barrier layer including MgO, and afree layer, the tunneling barrier layer having a crystal structure andan orientation, the tunneling barrier layer having a desiredstoichiometry; and a hard bias structure adjacent to the magneticelement.
 29. The magnetic recording transducer of claim 28 wherein thedesired stoichiometry includes an atomic ratio of Mg to O of less than1.2:1 and at least 1:1.